A silicon-on-insulator quantum wire
(1996) Solid-State Electronics — Vol. 39, n° 1, p. 49-51 (1996)
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- Abstract
- Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the device show reasonable agreement with the experimental characteristics.
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Citations
Colinge, JP., Baie, X., Bayot, V., & Grivei, E. (1996). A silicon-on-insulator quantum wire. Solid-State Electronics, 39(1), 49-51. https://doi.org/10.1016/0038-1101(95)00094-A (Original work published 1996)