RF extraction of self-heating effects in FinFETs of various geometries
(2011) IEEE Transactions on Electron Devices — Vol. 58, n° 10, p. 3335-3341 (2011)
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- Abstract
- Dynamic self-heating effect is characterised in n-channel FinFETs on Silicon-on-Insulator (SOI) platform. RF extraction technique is discussed and dependence of thermal resistance on fin width, number of parallel fins and fin spacing is studied.
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Makovejev, S., Olsen, S. H., & Raskin, J.-P. (2011). RF extraction of self-heating effects in FinFETs of various geometries. IEEE Transactions on Electron Devices, 58(10), 3335-3341. https://doi.org/10.1109/SIRF.2011.5719331 (Original work published 2011)