Total dose radiation response of multilayer buried insulators
(2000) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices — ISBN: [978-0-7923-6117-6], p. 205-212, published
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- Abstract
- The high radiation tolerance of SOI CMOS ICs to transient radiation effects and single event upset is well known [1], however, in contrast SOI CMOS devices are known to be rather susceptible to total-dose radiation effects. This sensitivity to total-dose exposure is associated with radiation-induced positive charge trapping in the thick buried oxides, which results in parasitic back-channel conduction in n-channel MOSFETs [2]. The most widely used method to suppress the radiation-induced back-channel conduction is additional doping of the Si film near the silicon film — buried insulator interface [3], however, at high irradiation doses this method is not always adequate.
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Citations
Rudenko, A. N., Nazarov, A., Lysenko, V. S., Kilchytska, V., Rudenko, T., & Djurenko, S. V. (2000). Total dose radiation response of multilayer buried insulators. In Peter L. F. Hemment, V. S. Lysenko, A. N. Nazarov (ed.), Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (p. p. 205-212). Springer. https://doi.org/10.1007/978-94-011-4261-8_19