New Quantum-Confinement Based SOI Single-Hole Transistor

Tang, Xiaohui;Baie, Xavier;Colinge, Jean-Pierre;Van de Wiele, Fernand;Bayot, Vincent
(2001) 199th Meeting of the Electrochemical Society 2001 — Location: Washington (USA) (26.March.2001)

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Authors
  • Tang, XiaohuiUCLouvain
    Author
  • Baie, XavierUCLouvain
    Author
  • Colinge, Jean-PierreUniversity of California, USA
    Author
  • Van de Wiele, FernandUCLouvain
    Author
  • Bayot, VincentUCLouvain
    Author
Abstract
In this paper, we demonstrate a single-hole transistor (SHT) with Coulomb blockade oscillations at temperatures in excess of 100 K fabricated using a fully CMOS compatible SOI technology with lithography resolution of 100 nm, already accessible with state-of-the-art optical lithography tools; The quantum effects in the SHT have been investigated by solving Poisson and Schrödinger equations self-consistently. The results show that quantum confinement tunnel barriers are responsible for the observed device characteristics and suggest a new route to make room temperature SHTs.
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Tang, X., Baie, X., Colinge, J.-P., Van de Wiele, F., & Bayot, V. (2001). New Quantum-Confinement Based SOI Single-Hole Transistor. Meeting abstracts of the 199th Meeting of the Electrochemical Society 2001. 199th Meeting of the Electrochemical Society 2001, Washington (USA). https://hdl.handle.net/2078.5/253286