Interacting GaAs bilayer hole systems with layer density imbalance.
(2004) Physica E: Low-Dimensional Systems and Nanostructures — Vol. 22, p. 32-35 (2004)
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- We study interacting GaAs hole bilayers in the limit of zero interlayer tunneling. When the layers have equal density, we observe a phase coherent bilayer quantum Hall state (QHS) at total filling factor nu = 1, flanked by a reentrant insulating phase at nearby fillings which suggests the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the phase coherent QHS becomes stronger, while the insulating phase disappears, suggesting that its stability requires the commensurability of the two layers.
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Tutuc, E., Melinte, S., De Poortere, E. P., Pillarisetty, R., & Shayegan, M. (2004). Interacting GaAs bilayer hole systems with layer density imbalance. Physica E: Low-Dimensional Systems and Nanostructures, 22, 32-35. https://doi.org/10.1016/j.physe.2003.11.209 (Original work published 2004)