Comparison of harmonic distortion characterization techniques for SOI MOSFETs
(2002) Acta Technica Belgica. Revue H F: Electricite Courants Faibles. Electronique Telecommunications — n° 4, p. 43-55 (2002)
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- Abstract
- Harmonic distorsion (HD) of silicon-on-insulator nMOSFETs is investigated through DC and radio-frequency (RF) characterization methods. Those techniques are compared and indicates that even if at 900 MHz, HD is dominated by the DC current-voltage characteristics, accurate evaluation of HD at RF requires further measurements.
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Citations
Parvais, B., Torrese, G., Cerderia, A., Schreurs, D., & Raskin, J.-P. (2002). Comparison of harmonic distortion characterization techniques for SOI MOSFETs. Acta Technica Belgica. Revue H F: Electricite Courants Faibles. Electronique Telecommunications, 4, 43-55. https://hdl.handle.net/2078.5/210236 (Original work published 2002)