Study of dislocations mobility in 4H-SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy
(2004) International Conference on Silicon Carbide and Related Materials 2003 — Location: Lyon, France
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- Abstract
- Dislocations are introduced by bending in a cantilever mode and annealing under compression. They consist of faulted half loops as shown by chemical etching. Their asymmetric propagation in the sample is attested both by etching and XRTT. Based on such a feature, a nucleation and glide mechanism is proposed. The dislocation velocity and the stress exponent are measured at 550°C.
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Idrissi, H., Lancin, M., Douin, J., & Pichaud, B. (2004). Study of dislocations mobility in 4H-SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy. Materials Science Forum, 457-460, 355-358. https://doi.org/10.4028/www.scientific.net/MSF.457-460.355 (Original work published 2004)