Influence of Carrier Confinement on the Subthreshold Swing of Multigate SOI MOSFETs

Colinge, Jean-Pierre;Afzalian, Aryan;Lederer, Dimitri;Lee, Chi-Woo;Yan, Ran
(2008) 4th EuroSOI Workshop 2008 — Location: Cork (Ireland) (23.January.2008)

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Authors
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Lederer, DimitriTyndall National Institute, University of Cork
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Yan, RanTyndall National Institute, University of Cork
    Author
Abstract
The minimum energy of the first conduction subband varies with gate voltage in trigate SOI MOSFETs in subthreshold operation. In an inversion-mode device, the energy level of the lowest subband increases when the electron concentration increases, while it decreases under the same conditions in some accumulation-mode devices. As a result of this quantum effect, the subthreshold swing of accumulation-mode trigate FETs is smaller than predicted by classical theory, while that of inversion-mode devices is higher. This effect is not observed in FinFETs and GAA MOSFETs and can be amplified by modifying the device cross section.
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Colinge, J.-P., Afzalian, A., Lederer, D., Lee, C.-W., & Yan, R. (2008). Influence of Carrier Confinement on the Subthreshold Swing of Multigate SOI MOSFETs. Proceedings of the 4th EuroSOI Workshop 2008, p. 61-62. https://hdl.handle.net/2078.5/252702