Prediction of RF performances of advanced MOS transistor from dc and low frequency measurements
(2018) Microwave & Optical Technology Letters — Vol. 60, n° 9, p. 2256-2262 (2018)
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- Authors
Kazemi Esfeh, Babak 
- Abstract
- This work presents a new method to easily and rapidly extract RF figures of merit of MOSFET transistors. Using DC and low frequency measurements, the extrinsic resistances (Rg, Rs, Rd), the intrinsic conductances (gm, gd), and the input capacitance Cgg have been extracted. The evaluation of these parameters has enabled to compute 2 RF figures of merit (FoM), namely, the current gain cutoff frequency fT and the maximum oscillation frequency fmax. It has been shown that both the proposed method and the conventional RF extraction technique give quite close values.
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Citations
Maafri Djabar, Kazemi Esfeh, B., Saadi Abdelhalim, Yagoub Mustapha C.E., & Raskin, J.-P. (2018). Prediction of RF performances of advanced MOS transistor from dc and low frequency measurements. Microwave & Optical Technology Letters, 60(9), 2256-2262. https://doi.org/10.1002/mop.31334 (Original work published 2018)