Dc Electrical-resistivity of Nb-doped Batio3 and Epr Measurements
(1992) Solid State Communications — Vol. 84, n° 11, p. 1033-1038 (1992)
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- Abstract
- DC electrical resistivity measurements along the c-axis of Nb-doped BaTiO3 single crystals are presented in a wide range of temperature, covering the four phases, with special attention to the rhomboedral one. The temperature dependence of the conductivity leads to convincing arguments in favour of a polaronic mechanism. Below the orthorhombic-rhomboedral transition point, a strong increase of the resistivity is observed. The correlation of this behavior with EPR analysis in the same temperature range, is consistent with a sharp trapping of the ''free'' electrons, when the temperature decreases.
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Citations
Gillot, C., Michenaud, J.-P., Maglione, M., & Jannot, B. (1992). Dc Electrical-resistivity of Nb-doped Batio3 and Epr Measurements. Solid State Communications, 84(11), 1033-1038. https://doi.org/10.1016/0038-1098(92)90434-B (Original work published 1992)