Chemical vapor deposition (CVD) of graphene on copper catalyst is presently considered as the most promising manufacturing approach as it yields largearea graphene with a relatively good control over the structural quality and the number of layers. In order to benefit from graphene’s excellent physical properties and fully exploit its potential in advanced technological applications, it is essential to precisely control the CVD process.
Huet, B., & Raskin, J.-P. (2018). Controlling the size, number of layers and planarity of CVD graphene single-crystals. Proceedings of The 12th international New Diamond and Nano Carbons Conference - NDNC 2018, p. 1 page. https://hdl.handle.net/2078.5/228342