Wideband characterization and simulation of advanced MOS devices for RF applications
(2005) 35th European Microwave Week – 13th GAAS Symposium — Location: Paris (France) (3.October.2005)
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Raskin, J.-P. (2005). Wideband characterization and simulation of advanced MOS devices for RF applications. 35th European Microwave Week – 13th GAAS Symposium, 109-112. https://hdl.handle.net/2078.5/228489