Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting

Poncé, Samuel;Jena, Debdeep;Giustino, Feliciano
(2019) Physical Review Letters — Vol. 123, n° 9, p. 96602 (2019)

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  • Poncé, Samuelorcid-logoUCLouvain
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  • Jena, DebdeepSchool of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
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  • Giustino, FelicianoDepartment of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
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Abstract
A fundamental obstacle toward the realization of GaN p-channel transistors is its low hole mobility. Here we investigate the intrinsic phonon-limited mobility of electrons and holes in wurtzite GaN using the ab initio Boltzmann transport formalism, including all electron-phonon scattering processes and manybody quasiparticle band structures. We predict that the hole mobility can be increased by reversing the sign of the crystal-field splitting in such a way as to lift the split-off hole states above the light and heavy holes. We find that a 2% biaxial tensile strain can increase the hole mobility by 230%, up to a theoretical Hall mobility of 120 cm2=Vs at room temperature and 620 cm2=Vs at 100 K.
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Poncé, S., Jena, D., & Giustino, F. (2019). Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting. Physical Review Letters, 123(9), 96602. https://doi.org/10.1103/physrevlett.123.096602 (Original work published 2019)