RF plasma annealing of the positive charge created by Fowler-Nordheim electron injection in buried oxide of SIMOX SOI structure

Nazarov, Alexei; Kilchytska, Valeriya; Barchuk, I.P.; Tkachenko, A.S.; Ashok, S.

RF plasma annealing of the positive charge created by Fowler-Nordheim electron injection in buried oxide of SIMOX SOI structure

Nazarov, Alexei

;

Kilchytska, Valeriya

;

Barchuk, I.P.

;

Tkachenko, A.S.

;

Ashok, S.

(2000) Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films — Vol. 18, n° 3, p. 1156-1164 (2000)

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Authors

Nazarov, AlexeiInstitute of Semiconductor Physics, Kiev
Author
Kilchytska, ValeriyaUCLouvain
Author
Barchuk, I.P.Institute of Semiconductor Physics, Kiev
Author
Tkachenko, A.S.Institute of Semiconductor Physics, Kiev
Author
Ashok, S.Institute of Semiconductor Physics, Kiev
Author

Affiliations

UCLouvainFSA/ELEC - Département d'électricité

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Nazarov, A., Kilchytska, V., Barchuk, I. P., Tkachenko, A. S., & Ashok, S. (2000). RF plasma annealing of the positive charge created by Fowler-Nordheim electron injection in buried oxide of SIMOX SOI structure. Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films, 18(3), 1156-1164. https://hdl.handle.net/2078.5/69289 (Original work published 2000)