Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements
(2005) 2005 IEEE International SOI Conference — Location: Honolulu, HI, USA (3.October.2005)
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- Abstract
- In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (R/sub be/) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.
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Lederer, D., Rozeau, O., & Raskin, J.-P. (2005). Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements. 2005 IEEE International SOI Conference (QSIC 2005) (IEEE Cat. No.05CH37694), p. 65-66. https://hdl.handle.net/2078.5/231221