Analysis of internal stress build-up during deposition of nanocrystalline Ni thin films using transmission electron microscopy
(2020) Thin Solid Films — Vol. 707, p. 138076 (2020)
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- Authors
Lumbeeck, Gunnar 
- Abstract
- Ni thin films sputter-deposited at room temperature with varying Ar pressures were investigated with automated crystal orientation mapping in a transmission electron microscope to uncover the mechanisms controlling the internal stress build-up recorded in-situ during deposition. Large grains were found to induce behaviour similar to a stress-free nucleation layer. The measurements of grain size in most of the Ni thin films are in agreement with the island coalescence model. Low internal stress was observed at low Ar pressure and was explained by the presence of large grains. Relaxation of high internal stress was also noticed at the highest Ar pressure, which was attributed to a decrease of Σ3 twin boundary density due to a low deposition rate. The results provide insightful information to better understand the relationship between structural boundaries and the evolution of internal stress upon deposition of thin films.
- Affiliations
University of Antwerp Electron Microscopy for Materials Science (EMAT)
Citations
Lumbeeck, G., Delvaux, A., Idrissi, H., Proost, J., & Schryvers, D. (2020). Analysis of internal stress build-up during deposition of nanocrystalline Ni thin films using transmission electron microscopy. Thin Solid Films, 707, 138076. https://doi.org/10.1016/j.tsf.2020.138076 (Original work published 2020)