Transient computer simulation of a CZ crystal growth process
(1996) 11th International Conference on Crystal Growth — Location: THE HAGUE(Netherlands) (18.June.1995)
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- Abstract
- The use of numerical simulation for improving the bulk growth process is illustrated by means of two sets of investigations. On the one hand, the rime dependent heat transfer during CZ silicon growth has been numerically simulated and compared to experiments for an industrial furnace. An excellent agreement between simulation and experiment is observed for both heater power and crucible temperature. On the other hand, 4 '', 6 '' and 8 '' CZ crystals were grown with different heat shields. It has been found that the critical pull rate V-crit, under which the oxidation induced stacking fault (OSF) ring vanishes in the wafer center, varies with the crystal diameter and the type of heat shield. A calculation of the axial temperature gradient at the solid/liquid interface for each combination reveals that the critical pull rate is proportional to this axial temperature gradient, which, in turn, is a function of the crystal diameter and heat shield. A precise law governing OSF ring formation has been established. In addition, improved processing conditions can be determined by an extensive use of simulation results.
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Citations
Dornberger, E., vonAmmon, W., Vandenbogaert, N., & Dupret, F. (1996). Transient computer simulation of a CZ crystal growth process. Journal of Crystal Growth, 166(1-4), 452-457. https://doi.org/10.1016/0022-0248(96)00068-1 (Original work published 1996)