Electron and hole transport in bismuth
(1972) Journal of Physics C: Solid State Physics — Vol. 5, n° 21, p. 3061-3072 (1972)
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- Abstract
- Measurements of the low field galvanomagnetic tensor components of bismuth from 77 to 300K are reported. The eight magnetoresistivity coefficients /b A//sub ij/ are found to vary as /b T//sup -2 / up to nearly 120 K, then as /b T//sup -3.9/ from 120 to 300 K. The electronic parameters are computed. The values of the electron ellipsoid tilt angle lie between 6 degrees 40' and 8 degrees 30' and the carrier density varies from 4.55*10/sup 17/ to 24.5*10/sup 17/ cm/sup -3/ at 77 K and 300 K respectively. All mobilities except mu /sub 2/ vary as /b T/ /sup -2/ in the lowest temperature range.
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Citations
Michenaud, J.-P., & Issi, J.-P. (1972). Electron and hole transport in bismuth. Journal of Physics C: Solid State Physics, 5(21), 3061-3072. https://doi.org/10.1088/0022-3719/5/21/011 (Original work published 1972)