Mobility improvement in nanowire junctionless transistors by uniaxial strain
(2010) Applied Physics Letters — Vol. 97, n° 4 (2010)
Files
4608.pdf
Open Access - Adobe PDF
- 556.61 KB
Details
- Authors
- Abstract
- Improvement of current drive in n- and p-type silicon junctionless metal-oxide-semiconductor-field-effect-transistors (MOSFETs) using strain is demonstrated. Junctionless transistors have heavily doped channels with doping concentrations in excess of 10(19) cm(-3) and feature bulk conduction, as opposed to surface channel conduction. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm thick silicon nanowires as narrow as 20 nm. These experimental results demonstrate the possibility of enhancing mobility in heavily doped silicon junctionless MOSFETs using strain technology. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474608]
- Affiliations
Citations
Raskin, J.-P., Colinge, J.-P., Ferain, I., Kranti, A., Lee, C.-W., Akhavan, N. D., Yan, R., Razavi, P., & Yu, R. (2010). Mobility improvement in nanowire junctionless transistors by uniaxial strain. Applied Physics Letters, 97(4). https://doi.org/10.1063/1.3474608 (Original work published 2010)