Study of dislocations mobility in 4H-SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy
(2003) International Conference on Silicon Carbide and Related Materials — Location: Lyon, France (5.October.2013)
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Idrissi, H. (2003). Study of dislocations mobility in 4H-SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy. Proceedings of the International Conference on Silicon Carbide and Related Materials. Published. International Conference on Silicon Carbide and Related Materials, Lyon, France. https://hdl.handle.net/2078.5/220010