SOI MOSFET architecture for improving DC and microwave characteristicsDehan, Morin;Vanhoenacker-Janvier, Danielle;Raskin, Jean-Pierre(2001) Union Radio-Scientifique Internationale (U.R.S.I.) — Location: Louvain-la-Neuve, Belgium
FilesNo attached file found for this publication.DetailsAuthorsDehan, MorinUCLouvainAuthorVanhoenacker-Janvier, DanielleUCLouvainAuthorRaskin, Jean-PierreUCLouvainAuthorAffiliationsUCLouvainFSA/ELEC - Département d'électricitéShow moreCitations APA Chicago FWB Dehan, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2001). SOI MOSFET architecture for improving DC and microwave characteristics. Proceedings of the Union Radio-Scientifique Internationale (U.R.S.I.), p. 21. https://hdl.handle.net/2078.5/229078