Sprayed (Cd, Zn)S thin films: performances as Cu-stopping layer and admittance spectroscopy modelling

Berote, G.;Minet, J.-P.;Streydio, Jean-Marie
(1987) Seventh E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR-10939-EN) — Location: Seville, Spain (27.October.1986)

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  • Berote, G.
    Author
  • Minet, J.-P.
    Author
  • Streydio, Jean-MarieUCLouvain
    Author
Abstract
(Cd, Zn)S layers with zinc concentration larger than 20% present some important advantages on Al-doped films as Cu-stopping layer. Efficiencies exceeding 7.5% have already been obtained. On the other side, practical characterization of CdZnS layers by capacitance measurements is disturbed in presence of deep levels in the bandgap of CdZnS. By numerical simulation (resolution of exact AC Poisson equation) the authors show that the classical assumption of single time constant may lead to wrong numerical values for the deep level parameters.
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Berote, G., Minet, J.-P., & Streydio, J.-M. (1987). Sprayed (Cd, Zn)S thin films: performances as Cu-stopping layer and admittance spectroscopy modelling. In Goetzberger, A.; Palz, W.; Willeke, G.; (ed.), Seventh E.C. Photovoltaic Solar Energy Conference. Proceedings of theInternational Conference (EUR-10939-EN) (p. p. 662-669). Reidel. https://hdl.handle.net/2078.5/218789