Influence of Free Radical Surface Activation on Si/SiC Heterogeneous Integration by Direct Wafer Bonding

Torchia, P.;Pampili, P.;O'Connell, J.;O'Brien, J.;Gity, F.;et.al.
(2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2017) — Location: Athens (Greece) (3.April.2017)

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InfluenceofFreeRadicalSurfaceActivationonSi-SiCHeterogeneousIntegrationbyDirectWaferBonding.pdf
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  • Torchia, P.Tyndall National Institute, University Collegae of Cork, Cork/UK
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  • Pampili, P.Tyndall National Institute, University Collegae of Cork, Cork/UK
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  • O'Connell, J.Chemistry Department, University College Cork, Cork/UK
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  • O'Brien, J.Tyndall National Institute, University Collegae of Cork, Cork/UK
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  • Kilchytska, ValeriyaUCLouvain
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  • Gity, F.Tyndall National Institute, University Collegae of Cork, Cork/UK
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Abstract
In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm.
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Torchia, P., Pampili, P., O’Connell, J., O’Brien, J., White, M., Schmidt, M., Sheehan, B., Waldron, F., Holmes, J. D., Monaghan, S., Duffy, R., Trajkovic, T., Kilchytska, V., Gammon, P., Cherkaoui, K., Hurley, P. K., & Gity, F. (2017). Influence of Free Radical Surface Activation on Si/SiC Heterogeneous Integration by Direct Wafer Bonding. Proceedings of the 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, p. 2. https://hdl.handle.net/2078.5/226708