RF extraction of self-heating effects in FinFETs of various geometries
(2011) 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11 — Location: Phoenix, Arizona, USA (17.January.2011)
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- Abstract
- Dynamic self-heating effect is characterised in n-channel FinFETs on Silicon-on-Insulator (SOI) platform. RF extraction technique is discussed and dependence of thermal resistance on fin width, number of parallel fins and fin spacing is studied.
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Citations
Makovejev, S., Olsen, S., & Raskin, J.-P. (2011). RF extraction of self-heating effects in FinFETs of various geometries. Proceedings of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11. Published. 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11, Phoenix, Arizona, USA. https://hdl.handle.net/2078.5/231013