Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
(1998) IEEE Transactions on Electron Devices — Vol. 45, n° 5, p. 1017-1025 (1998)
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- Abstract
- The maturation of low-cost silicon-on-insulator (SOT) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFET's. The extracted model is shown to be valid up to 40 GHz.
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Citations
Raskin, J.-P., Gillon, R., Chen, J., Vanhoenacker-Janvier, D., & Colinge, JP. (1998). Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling. IEEE Transactions on Electron Devices, 45(5), 1017-1025. https://doi.org/10.1109/16.669514 (Original work published 1998)