An analytical model for GAA resistors

Terao, A.;Van de Wiele, F.
(1991) ESSDERC ’91: 21st European Solid State Device Research Conference — Location: Montreux, Switzerland (16.September.1991)

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  • Terao, A.
    Author
  • Van de Wiele, F.
    Author
Abstract
The GAA transistor is a new SOI device with a symmetrical double-gate structure. The authors have developed an analytical model to describe the volume inversion occurring in this device. The model is used to characterize the mobility of the carriers both at the surface and in the volume of the SOI film.
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Terao, A., & Van de Wiele, F. (1991). An analytical model for GAA resistors. Microelectronic Engineering, Vol. 15, p. 233-236.