Performance of 500-mu-m thick silicon microstrip detectors after irradiation
(2002) Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment — Vol. 476, n° 3, p. 739-743 (2002)
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- (en) This paper investigates the performance of thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that thick devices are a promising technology for very large tracking systems.
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Dutta, S., Borrello, L., Buffini, A., Busoni, S., Civinini, C., D’Alessandro, R., Gregoire, G., Dell’Orso, R., Lenzi, M., Meschini, M., Messineo, A., Segneri, G., Starodumov, A., Tonelli, G., Verdini, P. G., & Berger, G. (2002). Performance of 500-mu-m thick silicon microstrip detectors after irradiation. Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 476(3), 739-743. https://doi.org/10.1016/S0168-9002(01)01665-5 (Original work published 2002)