Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors
(2017) IEEE Transactions on Industrial Electronics — p. 10 (2017)
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- This research details the potential of a micro-hotplate photo sensor, based on a silicon-on-insulator (SOI) lateral PIN (P+/P-/N+) diode and a micro-heater, fabricated on a thin suspended membrane from a commercial 1.0 μm SOI complementary metal oxide semiconductor (CMOS) technology. A local annealing (30-minute micro-heating, at elevated temperature ~ 250 °C) is directly carried out onto the suspended diode to optimize device characteristics (e.g. leakage current, output optical response), for device long-term stability and industrial application. The optical performances of such SOI lateral PIN diodes with 4 different backside reflectors placed below them are fully investigated. Under same incident illumination, 4 specific output photocurrents and responsivities are therefore obtained due to the varied light absorption in the active Si film. By combining the photodiodes responses with the 4 backside reflectors (i.e. gold, aluminum, silicon substrate and black silicon), multiple-wavelength detection can be straightforwardly achieved within the 450-900 nm wavelength range, which makes the SOI photodiode highly promising in red-green-blue (RGB) sensing, gas analyzing or plasma monitoring applications. Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors (PDF Download Available). Available from: https://www.researchgate.net/publication/316142307_Multiple-Wavelength_Detection_in_SOI_Lateral_PIN_Diodes_with_Backside_Reflectors [accessed May 29, 2017].
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Li, G., André, N., Gérard, P., Zeeshan Ali, S., Udrea, F., Francis, L., Zeng, Y., & Flandre, D. (2017). Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors. IEEE Transactions on Industrial Electronics, 10. https://doi.org/10.1109/TIE.2017.2694393 (Original work published 2017)