Accurate SOI MOSFET Characterization at Microwave Frequencies
(1999) Electron Technology — Vol. 32, n° 1/2, p. 72-80 (1999)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- The maturation of low cost SOI MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigourous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non--quasi--static small--signal model for MOSFET's. The extracted model is shown to be valid up to 40 GHz.
- Affiliations
Citations
Raskin, J.-P., Dambrine, G., & Vanhoenacker-Janvier, D. (1999). Accurate SOI MOSFET Characterization at Microwave Frequencies. Electron Technology, 32(1/2), 72-80. https://hdl.handle.net/2078.5/205027 (Original work published 1999)