Triple-Gate FinFETs for very high frequency applications

Martinez-Lopez, A.;Tinoco, J. C.;Martynyuk, A.;Raskin, Jean-Pierre
(2015) 4th International Symposium on Energy Challenges and Mechanics - working on small scales (ECM4) — Location: Aberdeen, Scotland (United Kingdom) (11.August.2015)

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Authors
  • Martinez-Lopez, A.
    Author
  • Tinoco, J. C.
    Author
  • Martynyuk, A.
    Author
  • Author
Abstract
CMOS technology has progressed astonishingly during the last decades, due to the successful shrinkage of transistor size, which has been described along the years by the Moore´s Law. Besides, according to the International Technology Roadmap of Semiconductors (ITRS), this development will continue beyond the 10-nm node, which is known as More-Moore technologies (MM). Furthermore, CMOS technology has promoted the possibility to develop novel non-digital applications, this is called the More-than-Moore technologies (MtM).
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Citations

Martinez-Lopez, A., Tinoco, J. C., Martynyuk, A., & Raskin, J.-P. (2015). Triple-Gate FinFETs for very high frequency applications. 4th International Symposium on Energy Challenges and Mechanics - working on small scales (ECM4), session 09E, paper # 6-266. https://hdl.handle.net/2078.5/228065