Self-heating and kink effects in a-Si : H thin film transistors
(2000) IEEE Transactions on Electron Devices — Vol. 47, n° 2, p. 387-397 (2000)
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- Abstract
- We describe a new physics based, analytical de model accounting for short channel effects for hydrogenated amorphous silicon (a Si:H) thin film transistors (TFT's), This model is based on the long channel device model. Two important short-channel phenomena, self-heating and kink effect, are analyzed in detail. For self-heating effect, a thermal kinetic analysis is carried out and a physical model and an equivalent circuit are used to estimate the thermal resistance of the device. In deriving the analytical model for self-heating effect, a first order approximation and self-consistency are used to give an iteration-free model accurate for a temperature rise of,up to 100 degrees C. In the modeling of the kink effects, a semi-empirical approach is used based on the physics involved. The combined model accurately reproduces the de characteristics of a-Si:H TFT's with a gate length of the 4 mu m. Predictions for a-Si:PI TFT's scaled down to 1 mu m are also provided, The model is suitable for use in device and circuit simulators.
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Wang, L., Fjeldly, T., Iniguez, B., Slade, H., & Shur, M. (2000). Self-heating and kink effects in a-Si : H thin film transistors. IEEE Transactions on Electron Devices, 47(2), 387-397. https://doi.org/10.1109/16.822285 (Original work published 2000)