MOS structure with a P/sup +/P profile
(1976) Physica Status Solidi. A: Applied Research — Vol. 33, n° 2, p. 661-671 (1976)
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- Abstract
- A simple semi-analytical method is proposed to compute the principal characteristics of non-uniformly doped MOS devices. By considering an inversion layer with a non-zero width it is possible to compute the complete C-U curve. The influence of the doping profile on the characteristics of such structures is shown. The high frequency C-U curve calculated by means of the method leads to a more accurate definition of the threshold voltage. Finally, the described model may be applied to compute the drain current of non-uniformly doped P/sup +/P MOS transistors in good agreement with the experimental values.
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Citations
Sinon, R., Hatert, R., & van de Wiele, F. (1976). MOS structure with a P/sup +/P profile. Physica Status Solidi. A: Applied Research, 33(2), 661-671. https://hdl.handle.net/2078.5/53772 (Original work published 1976)