Comparison of Contact Resistance Between Accumulation-Mode and Inversion-Mode Multigate FETs

Lee, Chi-Woo;Lederer, Dimitri;Afzalian, Aryan;Yan, Ran;Colinge, Jean-Pierre;et.al.
(2008) Solid-State Electronics — Vol. 52, n° 11, p. 1815-1820 (2008)

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Authors
  • Lee, Chi-WooTyndall National Institute, Lee Maltings
    Author
  • Lederer, DimitriUCLouvain
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Yan, RanTyndall National Institute, Lee Maltings
    Author
  • Colinge, Jean-PierreTyndall National Institute, Lee Maltings
    Author
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Abstract
The performances of accumulation-mode and inversion-mode multigate FETs are compared. The influence of gate underlap on the electrical properties is analyzed. Both simulation results and experimental data show that in a device with gate underlap, accumulation-mode devices have a higher current drive, lower source and drain resistance and less process variability than inversion-mode FETs.
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Lee, C.-W., Lederer, D., Afzalian, A., Yan, R., Dehdashti, N., Xiong, W., & Colinge, J.-P. (2008). Comparison of Contact Resistance Between Accumulation-Mode and Inversion-Mode Multigate FETs. Solid-State Electronics, 52(11), 1815-1820. https://doi.org/10.1016/j.sse.2008.09.006 (Original work published 2008)