Comparison of different extraction methods of small-signal parameters for SOI MOSFETs

Dehan, Morin;Raskin, Jean-Pierre;Vanhoenacker-Janvier, Danielle
(2002) 32nd European Microwave Conference, EuMC 2002 — Location: Milano, Italy (23.September.2002)

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Abstract
For the first time, a comparison is made between different equivalent circuits and different extraction procedures using simulated and measured Silicon-on-Insulator (SOI) MOSFETs. The methods, which will be described, are divided into three categories: the depletion methods, the inversion methods also called cold-FET methods and the saturation methods. Moreover, a novel technique will be presented for the extraction of parasitic capacitances of a MOSFET in deep depletion.
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Dehan, M., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2002). Comparison of different extraction methods of small-signal parameters for SOI MOSFETs. Proceedings of the 32nd European Microwave Conference, EuMC 2002, pp. 227-230. https://doi.org/10.1109/EUMA.2002.339268