Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives

et al.;Nguyen, Viet-Hung;et al.
(2013) 2013 IEEE International Electron Devices Meeting (IEDM) — Location: Washington, DC, USA (9.December.2013)

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et al., Nguyen, V.-H., & et al. (2013). Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives. IEDM2013, 12. https://doi.org/10.1109/iedm.2013.6724617 (Original work published 2013)