Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
(2011) Applied Physics Letters — Vol. 99, n° 1, p. 012110 (1-3) (2011)
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- Abstract
- The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2–x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2–x/n-Si contacts with a low thermal budget.
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Citations
Reckinger, N., Poleunis, C., Dubois, E., Dutu, C. A., Tang, X., Delcorte, A., & Raskin, J.-P. (2011). Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation. Applied Physics Letters, 99(1), 012110 (1-3). https://doi.org/10.1063/1.3608159 (Original work published 2011)