Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors
(2015) Applied Physics Letters — Vol. 107, n° 4, p. 43304 (2015)
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- Authors
Ikeda, Susumu 
Shang, Hui Tanigaki, Katsumi
- Abstract
- Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO2 gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active emiconducting layer grown on a modified SiO2 dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET)characteristics are ndependent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.
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Citations
Kanagasekaran, T., Shimotani, H., Ikeda, S., Shang, H., Kumashiro, R., & Tanigaki, K. (2015). Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors. Applied Physics Letters, 107(4), 43304. https://doi.org/10.1063/1.4927651 (Original work published 2015)