UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET
(2009) Meeting of the Electrochemical Society 2009 — Location: San Francisco (USA) (24.May.2009)
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UHVFabricationoftheYtterbiumSilicideasPotentialLowSchottkyBarrierS-DContactMaterialforN-TypeMOSFET
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- Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi2-x fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.
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Yarekha, D. A., Larrieu, G., Nreil, N., Dubois, E., Godey, S., Wallart, X., Soyer, C., Remiens, D., Reckinger, N., Tang, X., Laszcz, A., Ratajczak, J., & Halimaoui, A. (2009). UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET. Meeting of the Electrochemical Society 2009, San Francisco (USA). https://hdl.handle.net/2078.5/231751