Time and Frequency Domain Characterization of Transistor Self-Heating

Makovejev, Sergej;Olsen, S.H.;Kilchytska, Valeriya;Raskin, Jean-Pierre
(2013) IEEE Transactions on Electron Devices — Vol. 60, n° 6, p. 1844-1851 (2013)

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Abstract
Pulsed I–V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I–V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.
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Makovejev, S., Olsen, S. H., Kilchytska, V., & Raskin, J.-P. (2013). Time and Frequency Domain Characterization of Transistor Self-Heating. IEEE Transactions on Electron Devices, 60(6), 1844-1851. https://doi.org/10.1109/TED.2013.2259174 (Original work published 2013)