Nonlinearities in GaInAs/InP p-i-n photodetectors

Wu, TX;Vander Vorst, André
(1996) Microwave & Optical Technology Letters — Vol. 13, n° 5, p. 297-300 (1996)

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  • Wu, TX
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  • Vander Vorst, AndréUCLouvain
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Abstract
In this article we present the analysis and simulation of nonlinearities in the GaInAs/InP p-i-n photodetector at high illuminations. It is shown that the nonlinearities are generated principally in the low-field region of the intrinsic layer. The frequency response, especially for the nonlinear characteristics, is illustrated to differ significantly between top-illumination and substrate-illumination operations at common biasing level. (C) 1996 John Wiley & Sons, Inc.
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Wu, T., & Vander Vorst, A. (1996). Nonlinearities in GaInAs/InP p-i-n photodetectors. Microwave & Optical Technology Letters, 13(5), 297-300. https://doi.org/10.1002/(SICI)1098-2760(19961205)13:5<297::AID-MOP15>3.0.CO;2-4 (Original work published 1996)