Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology
(2005) 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium — Location: Long Beach, CA, USA (12.June.2005)
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- Abstract
- The behavior of an integrated traveling wave amplifier (TWA), fabricated in a 130 nm silicon-on-insulator (SOI) CMOS process, has been characterized over a temperature range from 25 degrees C to 250 degrees C. The TWA is a four-stage cascode design which uses floating body (FB) transistors and microstrip lines as passives. A gain of 7 dB with a 0.4-27 GHz bandwidth is measured under 1.4 V supply voltage. The effects of high temperature are observed on the gain of the TWA, as well as on the SOI transistors and the microstrip lines.
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Si Moussa, M., Pavageau, C., Danneville, F., Russat, J., Fel, N., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2005). Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology. In Jerng, A.; (ed.), 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEECat. No. 05CH37652) (p. p. 495-498). IEEE. https://hdl.handle.net/2078.5/230716