This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.
Luu, A., Austin, P., Miller, F., Buard, N., Carriere, T., Poirot, P., Gaillard, R., Bafleur, M., & Sarrabayrouse, G. (2010). Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS. IEEE Transactions on Nuclear Science, 57(4), 1900-1907. https://doi.org/10.1109/TNS.2010.2044808 (Original work published 2010)