Pretreatment effects on void formation for low temperature Si-Si bonded wafers

Zhang, Xiaodong;Raskin, Jean-Pierre
(2003) Seventh Int. Symp. on Semiconductor Wafer Bonding; science, technology and applications, 203rd Meeting of the Electrochemical Society — Location: Paris, France (27.April.2003)

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Zhang, X., & Raskin, J.-P. (2003). Pretreatment effects on void formation for low temperature Si-Si bonded wafers. Proceedings of the Seventh Int. Symp. on Semiconductor Wafer Bonding; science, technology and applications, 203rd Meeting of the Electrochemical Society, pp. 233-238. https://hdl.handle.net/2078.5/229546