Velázquez Galván, Yenni G.Departamento de Matemáticas y Física, Instituto Tecnológico y de Estudios Superiores de Occidente, Periférico Sur Manuel Gómez Morín 8585, 45604 Tlaquepaque, Jalisco, Mexico
Author
Encinas, ArmandoDivisión de Materiales Avanzados, Instituto Potosino de Investigación Científica y Tecnológica A. C., Camino a la Presa 2055, 78216 San Luis Potosi, San Luis Potosi, Mexico
Author
Martínez-Huerta, Juan ManuelEscuela de Ingeniería y Ciencias, Tecnológico de Monterrey, Atlixcáyotl 5718, Reserva Territorial Atlixcáyotl, 72453 Puebla, Puebla, Mexico
Author
Piraux, LucUCLouvain
Author
Medina, Joaquín de la TorreInstituto de Investigaciones en Materiales‑Unidad Morelia, Universidad Nacional Autónoma de México, Antigua Carretera a Pátzcuaro No. 8701, Col. Ex Hacienda de San José de la Huerta, 58190 Morelia, Michoacán, Mexico
Author
Abstract
A novel approach for a non-volatile destructive readout memory application using bistable magnetic nanowire arrays is presented. The encoded information is stored as binary 1 and 0 by groups of NWs magnetized in the positive and negative states, respectively. We leverage the naturally occurring switching field distribution of the NW array and a tailored alternating decreasing magnetic field to program remanent magnetic states. To retrieve the information, the measured remagnetization curve exhibits a star-like behavior with jumps and plateaus and its derivative converts this information to a binary-type format. Two encoding and readout schemes are proposed and validated: binary bits and barcodes. For each case, the implementation and optimization procedures are illustrated, along with the required processing to obtain a useful readout signal. This strategy holds potential for non-volatile memory applications in which the stored information is erased during reading and can be reused indefinitely.
Velázquez Galván, Y. G., Encinas, A., Martínez-Huerta, J. M., Piraux, L., & Medina, J. d. l. T. (2024). Bistable magnetic nanowires: A new approach to non-volatile memory with single readout and automatic deletion. Journal of Materials Research, 39(8), 1289-1299. https://doi.org/10.1557/s43578-024-01310-y (Original work published 2024)