Structural and mechanical properties of the amorphous silicon carbide films for MEMS applications
(2006) The 5th International Conference on Amorphous & Microcrystalline Semiconductors — Location: St. Petersburg (Russia) (19.June.2006)
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- Abstract
- At present time the development of micro-electro-mechanical-systems (MEMS) technologies is of the great interest and the range of their application is steadily and rapidly increasing. Usually the standard silicon based technology is used for fabrication of functional elements in MEMS devices. But for some applications the use of other materials with unique properties, such as SiC, is strongly needed [1]. But deposition of polycrystalline SiC films is possible only at substrate temperature over 6000С, that strongly restricts the applicability of CMOS technology for MEMS fabrication. But it is known that some mechanical and chemical properties of crystalline SiC can be preserved in amorphous state and amorphous silicon-carbon alloy films can be deposited at low substrate temperature.
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Citations
Rusavsky, V. A., Vasin, A. V., Lysenko, V. S., Nazarov, A. N., Dub, S. N., André, N., & Raskin, J.-P. (2006). Structural and mechanical properties of the amorphous silicon carbide films for MEMS applications. The 5th International Conference on Amorphous & Microcrystalline Semiconductors, St. Petersburg (Russia). https://hdl.handle.net/2078.5/228488