DC and AC analyses of novel SOI MOSFET devices using 2-D and 3-D numerical simulations

Chung, Tsung Ming;Raskin, Jean-Pierre
(2005) ”, 3rd International Conference on Materials for Advanced Technologies – ICMAT 2005 and 9th International Conference on Advanced Materials (ICAM 2005) — Location: Singapore (3.July.2005)

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Chung, T. M., & Raskin, J.-P. (2005). DC and AC analyses of novel SOI MOSFET devices using 2-D and 3-D numerical simulations. Proceedings of the ”, 3rd International Conference on Materials for Advanced Technologies – ICMAT 2005 and 9th International Conference on Advanced Materials (ICAM 2005), p. Paper G-6-P063. https://hdl.handle.net/2078.5/229428