Design of a traveling wave amplifier in 0.13 µm partially depleted SOI

Si Moussa, Mehdi;Pavageau, C.;Danneville, F.;Russat, J.;Vanhoenacker-Janvier, Danielle;et.al.
(2005) First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’05 — Location: Granada, Spain (19.January.2005)

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  • Si Moussa, MehdiUCLouvain
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  • Pavageau, C.IEMN, Villeneuve d'Ascq, France
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  • Danneville, F.IEMN, Villeneuve d'Ascq, France
    Author
  • Russat, J.IEMN, Villeneuve d'Ascq, France
    Author
  • Author
  • Vanhoenacker-Janvier, DanielleUCLouvain
    Author
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Si Moussa, M., Pavageau, C., Danneville, F., Russat, J., Fel, N., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2005). Design of a traveling wave amplifier in 0.13 µm partially depleted SOI. Proceedings of the First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’05, pp. 143-144. https://hdl.handle.net/2078.5/229356