RF small-signal analysis of Schottky-barrier p-MOSFET
(2008) IEEE Transactions on Electron Devices — Vol. 55, n° 5, p. 1192-1202 (2008)
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- Abstract
- This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer S-parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a 120-nm-gate-length SB MOSFET. Then, using ac simulations, HF FoM's sensitivity along SB height and underlap length variations are subsequently presented. The whole study provides, for SB MOSFETs, a deep understanding of key ac-element (transconductances and capacitances) behavior as well as process-parameter optimization to achieve the best HF FoMs.
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Citations
Valentin, R., Dubois, E., Raskin, J.-P., Larrieu, G., Dambrine, G., Lim, T. C., Breil, N., & Danneville, F. (2008). RF small-signal analysis of Schottky-barrier p-MOSFET. IEEE Transactions on Electron Devices, 55(5), 1192-1202. https://doi.org/10.1109/TED.2008.919382 (Original work published 2008)