High gain and fast detection of warfare agent using back-gated silicon nanowires MOSFETs
(2011) IEEE Electron Device Letters — Vol. 32, n° 7, p. 976-978 (2011)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynylbenzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous simulant, and both static and dynamic measurements were performed. A current gain of 4 × 106 is obtained upon the detection of the subpart-per-million concentration of a nerve-agent simulant. This represents a four-decade improvement over previous demonstration based on nanoribbons, proving better sensing capabilities of NWs. Technology-computer-aided-design simulations before and after gas detection have been performed to gain insight into the physical mechanisms involved in the gas detection and to investigate the impact of the surface-to-volume ratio on sensor sensitivity.
- Affiliations
Citations
Passi, V., Ravaux, F., Dubois, E., Clavaguera, S., Celle, C., Simonato, J. P., Silvestri, L., Reggiani, S., Vuillaume, D., & Raskin, J.-P. (2011). High gain and fast detection of warfare agent using back-gated silicon nanowires MOSFETs. IEEE Electron Device Letters, 32(7), 976-978. https://doi.org/10.1109/LED.2011.2146750 (Original work published 2011)