Avalanche multiplication factor and reverse current of Si p-n junctions
(1976) Physica Status Solidi. A: Applied Research — Vol. 38, n° 1, p. 123-129 (1976)
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- Abstract
- A method is presented for calculating numerically the reverse current of p-n junctions, taking the multiplication phenomenon into account. Reduction of the computer time may be achieved by the introduction of an adequate approximation for generation-dominated junctions. The last method can be used to compute the values of the ionization coefficients starting from the experimental reverse current characteristics. An example is given for Si p-n junctions at 125 degrees C.
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Hatert, R., Couvreur, P., Sinon, R., & Van De Wiele, F. (1976). Avalanche multiplication factor and reverse current of Si p-n junctions. Physica Status Solidi. A: Applied Research, 38(1), 123-129. https://hdl.handle.net/2078.5/85032 (Original work published 1976)